Failure modes of tantalum capacitors made by different technologies

نویسندگان

  • Petr Vasina
  • T. Zednicek
  • Josef Sikula
  • Jan Pavelka
چکیده

Generally, tantalum capacitor failure modes have been discussed both for the standard manganese dioxide cathode and the new conductive polymer (CP) type. For standard tantalum in the normal operation mode, an electrical breakdown can be stimulated by an increase of the electrical conductance in channel by an electrical pulse or voltage level. This leads to capacitor destruction followed by thermal breakdown. In the reverse mode, we have reported that thermal breakdown is initiated by an increase of the electrical conductance by Joule heating at a relatively low voltage level. Consequently, a feedback cycle consisting of temperature conductivity current Joule heat temperature, ending with electrical breakdown was created. Both of these breakdown modes possess a stochastic behavior and can be hardly localized in advance. Conductive polymer capacitors have shown a slightly different current conductivity mechanism compared to standard tantalum capacitors. The breakdown of CP dielectrics is similar to avalanche and field emission breaks. It is an electromechanical collapse due to the attractive forces between electrodes, electrochemical deterioration, dendrite formation, and so on. However, some self-healing of the cathode film has been reported. This can be attributed to film evaporation, carbonizing or reoxidation. Not all of the breakdowns of CP capacitors can lead to self-healing or an open circuit state. Short circuits can also occur.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Scintillation Breakdowns in Chip Tantalum Capacitors

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often con...

متن کامل

Failure Modes in Capacitors When Tested Under a Time-Varying Stress

Power-on failure has been the prevalent failure mechanism for solid tantalum capacitors in decoupling applications. A surge step stress test (SSST) has been previously applied to identify the critical stress level of a capacitor batch to give some predictability to the power-on failure mechanism [1]. But SSST can also be viewed as an electrically destructive test under a time-varying stress (vo...

متن کامل

Characterization of Tantalum Polymer Capacitors

Solid-electrolyte tantalum capacitors were first developed and commercially produced in the 1950s. They represented a quantum leap forward in miniaturization and reliability over existing wound-foil wet electrolytic capacitors. While the solid tantalum capacitor has dramatically improved electrical performance versus wet-electrolyte capacitors, especially at low temperatures, today’s electronic...

متن کامل

Effect of Preconditioning and Soldering on Failures of Chip Tantalum Capacitors

Soldering of molded case tantalum capacitors can result in damage to Ta2O5 dielectric and first turn-on failures due to thermo-mechanical stresses caused by CTE mismatch between materials used in the capacitors. It is also known that presence of moisture might cause damage to plastic cases due to the pop-corning effect. However, there are only scarce literature data on the effect of moisture co...

متن کامل

New I.R. Thermography methodology for failure analysis on tantalum capacitors

Tantalum capacitors are widely used on electronic systems due to their high capacitance value in a small size and due to their long storage capability. They are particularly attractive for aerospace applications. From failure analysis perspective, tantalum capacitors are challenging. Their typical failure mechanisms are characterized by a local increase of the leakage current in the manganese d...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:
  • Microelectronics Reliability

دوره 42  شماره 

صفحات  -

تاریخ انتشار 2002